Transformation of a SiC/por-SiC/Ti[O.sub.2] structure during rapid thermal annealing

The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/Ti[O.sub.2] structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of c...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-09, Vol.46 (9), p.1221
Main Authors: Konakova, R.V, Kolomys, O.F, Lytvyn, O.S, Okhrimenko, O.B, Strelchuk, V.V, Svetlichnyi, A.M, Linets, L.G
Format: Article
Language:English
Subjects:
Annealing
Carbon compounds
Nuclear radiation
Photoluminescence
Silicon compounds
Online Access:Get full text
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Summary:The surface morphology and the Raman and photoluminescence spectra of a SiC/por-SiC/Ti[O.sub.2] structure before and after rapid thermal annealing are studied. It is shown that rapid thermal annealing brings about the appearance of new bands in the Raman spectrum; these bands are characteristic of carbon compounds. An analysis of the spectra of photoluminescence excited by radiation with an energy lower than that of the band-gap energy in 6H-SiC has shown that the appearance of photoluminescence in porous silicon carbide is related to impurity states, which are formed at the surface due to products of chemical reactions in the course of etching. DOI:10.1134/S1063782612090114
ISSN:1063-7826
DOI:10.1134/S1063782612090114