Growth of [Ge.sub.1-x][Sn.sub.x] solid solution films and study of their structural properties and some of their photoelectric properties

From the charge state and closeness of the covalent radii of molecules of the solution-forming components, the possibility of the formation of the solutions [Si.sub.1-x][Ge.sub.x], [Si.sub.1-x][Sn.sub.x], [([Si.sub.2]).sub.1-x][(SnC).sub.x], [Ge.sub.1-x][Sn.sub.x], [([Ge.sub.2]).sub.1-x][(SiSn).sub....

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2012-08, Vol.46 (8), p.1088
Main Authors: Saidov, A.S, Usmonov, Sh.N, Asatova, U.P
Format: Article
Language:English
Subjects:
Diffraction
Epitaxy
Silicon compounds
X-rays
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Summary:From the charge state and closeness of the covalent radii of molecules of the solution-forming components, the possibility of the formation of the solutions [Si.sub.1-x][Ge.sub.x], [Si.sub.1-x][Sn.sub.x], [([Si.sub.2]).sub.1-x][(SnC).sub.x], [Ge.sub.1-x][Sn.sub.x], [([Ge.sub.2]).sub.1-x][(SiSn).sub.x], [(SiC).sub.1-x][(GeC).sub.x], [(GeC).sub.1- x][(SnC).sub.x], and [(SiGe).sub.1-x][(SnC).sub.x] based on chemical elements of Group IV has been predicted. Single-crystal films of the substitutional solid solution [Ge.sub.1- x][Sn.sub.x] (0 [less than or equal to] x ≤ 0.03) have been grown on Ge substrates by liquid-phase epitaxy. X- ray diffraction patterns, spectral photosensitivity, and the I-V characteristics of the obtained n-Ge-p-[Ge.sub.1-x][Sn.sub.x] heterostructures have been investigated. The lattice parameters of the epitaxial film and the substrate [a.sub.f] = 5.6812 Å and [a.sub.s] = 5.6561 Å have been determined. The spectral photosensitivity of the n-Ge-p-[Ge.sub.1-x][Sn.sub.x] heterostructures encompasses the photon energy range from 0.4 to 1.4 eV. It is shown that the forward portion of the I-V characteristics of the investigated structures at low voltages (up to 0.5 V) is described by the exponential dependence I = [I.sub.0]exp(qV/ckT) and at high voltages (V>0.5 V), by the power dependence I [varies] [V.sup.a] with the values α = 2 at V= (0.5-0.9) V, α = 1.3 at V = (0.9-1.4) V, and α = 2 at V > 1.4 V. The experimental data are explained within the double injection model for the n-p-p structure using the drift mechanism of current transport in the ohmic relaxation mode taking into account the inertia of the electron exchange inside a recombination complex. DOI: 10.1134/S1063782612080180
ISSN:1063-7826
DOI:10.1134/S1063782612080180