Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide

The thermoelectric power of electronic indium antimonide with n = 2 × 10 14 cm −3 in a transverse magnetic field as high as 7 kOe is studied in the temperature range from 4.8 to 120 K. The thermoelectric power is found to be independent of field at a temperature close to 56 K.

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-09, Vol.48 (9), p.1139-1140
Main Authors: Gadjialiev, M. M., Pirmagomedov, Z. Sh, Efendieva, T. N.
Format: Article
Language:English
Subjects:
Electronic Properties of Semiconductors
Indium
Magnetic fields
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
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Summary:The thermoelectric power of electronic indium antimonide with n = 2 × 10 14 cm −3 in a transverse magnetic field as high as 7 kOe is studied in the temperature range from 4.8 to 120 K. The thermoelectric power is found to be independent of field at a temperature close to 56 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614090085