Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells

The photoelectric characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells are studied in relation to the method used to form the photocell chip. It is shown that the application of a postgrowth technique developed in the study for separating a nanoheterostructure into chips in a single proc...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-09, Vol.48 (9), p.1217
Main Authors: Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A
Format: Article
Language:English
Subjects:
Methods
Solar batteries
Solar cells
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Summary:The photoelectric characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells are studied in relation to the method used to form the photocell chip. It is shown that the application of a postgrowth technique developed in the study for separating a nanoheterostructure into chips in a single process makes it possible to improve the quality of passivation of the chip edges, which diminishes the surface leakage currents and makes larger the yield of devices with improved characteristics. DOI: 10.1134/S1063782614090024
ISSN:1063-7826
DOI:10.1134/S1063782614090024