High-power AlGaInN LED chips with two-level metallization

A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-09, Vol.48 (9), p.1254-1259
Main Authors: Zakheim, D. A., Itkinson, G. V., Kukushkin, M. V., Markov, L. K., Osipov, O. V., Pavlyuchenko, A. S., Smirnova, I. P., Chernyakov, A. E., Bauman, D. A.
Format: Article
Language:English
Subjects:
Fabrication
Light-emitting diodes
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Testing of Materials and Structures
Treatment
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Summary:A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to 78%). Numerical simulation of the current spread, employed when developing the chip topology, makes it possible to achieve high uniformity of the current distribution over the active-region area and to obtain small values of the differential resistance of the chip (0.3 Ω). Light-emitting diodes with the maximum external quantum efficiency (60%) and output optical power (542 mW) at a working pump current of 350 mA are fabricated on the basis of crystals developed in the study.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614090267