Effect of light on the mobility of free carriers in indium-monoselenide crystals

The effect of light from intrinsic and impurity optical absorption regions on free-carrier mobility in nominally undoped indium monoselenide n -InSe crystals with the initial dark conductivity σ T 0 = 10 −3 −10 −8 Ω −1 cm −1 at 77 K is investigated under different external conditions. The dependence...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-08, Vol.48 (8), p.981-985
Main Authors: Abdinov, A. Sh, Babayeva, R. F., Amirova, S. I., Ragimova, N. A., Rzayev, R. M.
Format: Article
Language:English
Subjects:
Analysis
Electric properties
Electronic Properties of Semiconductors
Indium
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Semiconductors
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Summary:The effect of light from intrinsic and impurity optical absorption regions on free-carrier mobility in nominally undoped indium monoselenide n -InSe crystals with the initial dark conductivity σ T 0 = 10 −3 −10 −8 Ω −1 cm −1 at 77 K is investigated under different external conditions. The dependences of free-carrier mobility, positive and negative mobility memories, and quenching of the mobility memory on ilumination are established. A model based on partial disorder of the investigated crystals is proposed: this model satisfactorily interprets the experimental data obtained.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614080028