Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

The effect of electron irradiation on n -4 H -SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be V d ≈ 0.25 cm −1 . Total conductivity compensation in samples with an initial carrier concentration of (1–2) × 10 15 cm −2...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-08, Vol.48 (8), p.1006-1009
Main Authors: Kozlovski, V. V., Lebedev, A. A., Lomasov, V. N., Bogdanova, E. V., Seredova, N. V.
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Electric properties
Electronic Properties of Semiconductors
Electrons
Magnetic Materials
Magnetism
Photoluminescence
Physics
Physics and Astronomy
Silicon carbide
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Summary:The effect of electron irradiation on n -4 H -SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be V d ≈ 0.25 cm −1 . Total conductivity compensation in samples with an initial carrier concentration of (1–2) × 10 15 cm −2 is observed at irradiation doses of ∼5 × 10 15 cm −2 . Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4 H -SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614080156