Characterization of porous silicon carbide according to absorption and photoluminescence spectra

The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide ( por -SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-08, Vol.48 (8), p.1028-1030
Main Authors: Berezovska, N. I., Bacherikov, Yu. Yu, Konakova, R. V., Okhrimenko, O. B., Lytvyn, O. S., Linets, L. G., Svetlichnyi, A. M.
Format: Article
Language:English
Subjects:
Analysis
Chemical properties
Epitaxy
Interaction with Radiation
Magnetic Materials
Magnetism
Photoluminescence
Physics
Physics and Astronomy
Semiconductors
Silicon
Silicon carbide
Spectroscopy
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Summary:The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide ( por -SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por -SiC at the excitation photon energy h ν ex ≤ E g appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782614080041