Epitaxial growth of MnGa/GaAs layers for diodes with spin injection

The possibility of the epitaxial growth of ferromagnetic manganese gallide (Mn 3 Ga 5 ) layers on a the GaAs(100) surface was demonstrated. The ferromagnetic properties of epitaxial Mn 3 Ga 5 at room temperature were evaluated from measurements of the anomalous Hall effect. A diode structure based o...

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Bibliographic Details
Published in:Physics of the solid state 2014-10, Vol.56 (10), p.2131-2134
Main Authors: Dorokhin, M. V., Pavlov, D. A., Bobrov, A. I., Danilov, Yu. A., Demina, P. B., Zvonkov, B. N., Zdoroveishchev, A. V., Kudrin, A. V., Malekhonova, N. V., Malysheva, E. I.
Format: Article
Language:English
Subjects:
Epitaxy
Ferromagnetism
Physics
Physics and Astronomy
Solid State Physics
Surface Physics and Thin Films
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Summary:The possibility of the epitaxial growth of ferromagnetic manganese gallide (Mn 3 Ga 5 ) layers on a the GaAs(100) surface was demonstrated. The ferromagnetic properties of epitaxial Mn 3 Ga 5 at room temperature were evaluated from measurements of the anomalous Hall effect. A diode structure based on the Mn 3 Ga 5 /GaAs contact was formed, and the low-temperature electroluminescence of this diode was measured. The possibility of electroluminescence and the high crystal quality of the structures under study showed promises of their application in light-emitting diodes with spin injection.
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783414100102