Charge carrier transport in leds based on multiple [.sub.0.5][In.sub.0.5]P quantum wells

The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple [([Al.sub.x][Ga.sub.1-x]).sub.0.5] [In.sub.0.5]P/[([Al.sub.0.54][Ga.sub.0.46]).sub.0.5][In.sub.0.5]P quantum wells are presented. The experiment showed that increas...

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Bibliographic Details
Published in:Russian physics journal 2014-11, Vol.57 (7), p.915
Main Authors: Prudaev, I.A, Oleinik, V.L, Romanov, I.S, Brudnyi, V.N, Ryaboshtan, Yu.L, Gorlachuk, P.V, Marmalyuk, A.A
Format: Article
Language:English
Subjects:
Light-emitting diodes
Quantum wells
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Summary:The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple [([Al.sub.x][Ga.sub.1-x]).sub.0.5] [In.sub.0.5]P/[([Al.sub.0.54][Ga.sub.0.46]).sub.0.5][In.sub.0.5]P quantum wells are presented. The experiment showed that increasing the number of quantum wells and decreasing the Al content in the [Al.sub.x][Ga.sub.1-x] solid solution lead to an increase in the forward current at a fixed voltage. An analysis showed that the results obtained can be interpreted using the theory of diffusion charge transport in a double heterostructure with a narrow-bandgap layer, the thickness of which is many times larger than the thickness of a single quantum well. The proposed approach takes into account the carrier transport by tunneling through the barriers in an active region with multiple quantum wells. Keywords: LED, heterostructure, quantum well, current-voltage characteristic.
ISSN:1064-8887
DOI:10.1007/s11182-014-0324-5