Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions

Photosensitive n -TiN/ p -Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of V oc = 0.4 V and a short-circuit current of I sc = 1.36 mA/cm 2 under illumination at 80 mW/cm 2 . An analysis of the light current-voltage characte...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2014-11, Vol.48 (11), p.1504-1506
Main Authors: Solovan, M. N., Brus, V. V., Maryanchuk, P. D.
Format: Article
Language:English
Subjects:
Analysis
Magnetic Materials
Magnetism
Nitrides
Physics
Physics and Astronomy
Physics of Semiconductor Devices
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Summary:Photosensitive n -TiN/ p -Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of V oc = 0.4 V and a short-circuit current of I sc = 1.36 mA/cm 2 under illumination at 80 mW/cm 2 . An analysis of the light current-voltage characteristic and quantum-yield spectrum demonstrate that the poor photoelectric parameters are due to recombination in the base region of the heterojunction and to the formation of a high-resistivity SiO 2 layer on the surface of polycrystalline silicon, which fails to provide high-quality passivation of surface states.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261411027X