Loading…

Cadmium telluride in tellurium—cadmium films consisting of ultradispersed particles

Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. Thi...

Full description

Saved in:
Bibliographic Details
Published in:Technical physics 2015-08, Vol.60 (8), p.1171-1175
Main Authors: Tuleushev, Yu. Zh, Volodin, V. N., Migunova, A. A., Lisitsyn, V. N.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Solid solutions of tellurium in cadmium, cadmium in tellurium, and cadmium in cadmium telluride synthesized during sputtering are formed for the first time by ion-plasma sputtering and the codeposition of ultradispersed Te and Cd particle fluxes onto substrates moving with respect to the fluxes. This fact supports thermofluctuation melting and coalescence of small particles. The lattice parameter of cadmium telluride, which coexists with an amorphous solid solution of tellurium in cadmium in a coating, is smaller than the tabulated value and reaches it when the cadmium concentration in a coating increases to 70 at %. The lattice parameter of the fcc lattice of cadmium telluride increases with the cadmium concentration in a coating according to the linear relation a = 0.0002C Cd + 0.6346 nm (where C Cd is the cadmium concentration in the coating, at %), which is likely to indicate a certain broadening of the homogeneity area. The estimation of the particle size shows that the cadmium telluride grain size is 10–15 nm, which implies that the coatings are nanocrystalline. The absorption and transmission spectra of the tellurium—cadmium films at the fundamental absorption edge demonstrate that their energy gaps are larger than that of stoichiometric CdTe, which can be explained by the experimental conditions of crystal structure formation.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784215080265