Effect of the barrier thickness on the optical properties of InGaN/GaN/[Al.sub.2][O.sub.3] LED heterostructures

The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are p...

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Bibliographic Details
Published in:Russian physics journal 2015-11, p.996
Main Authors: Romanov, I. S, Prudaev, I. A, Brudnyi, V. N, Kopyev, V. V, Novikov, Vad. A, Marmalyuk, A. A, Kureshov, V. A, R.Sabitov, D, Mazalov, A. V
Format: Article
Language:English
Subjects:
Analysis
Indium
Light-emitting diodes
Liquors
Nitrides
Optical properties
Quantum wells
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Summary:The results of numerical and experimental study of the electric field strength, photoluminescence wavelength, and internal quantum efficiency of InGaN/GaN (0001) blue LED heterostructures consisting of InGaN multiple quantum wells and GaN barrier layers with the thicknesses of 3, 10, and 15 nm are presented. It is shown that a decrease in the thicknesses of the GaN barrier layers results in a blue shift of the wavelength of LED structures and in an increase of internal quantum efficiency of the structure at high excitation power density. Keywords: gallium and indium nitrides, quantum well, Quantum-Confined Stark Effect, photoluminescence, internal quantum efficiency, LED.
ISSN:1064-8887
DOI:10.1007/s11182-015-0600-z