Loading…
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic [In.sub.0.70][Al.sub.0.30]As/[In.sub.0.76][Ga.sub.0.24]As/[In.sub.0.70][Al.sub.0.30]As structures on GaAs substrates
The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of [In.sub.0.70][Al.sub.0.30]As/[In.sub.0.76][Ga.sub.0.24]As/[In.sub.0.70][Al.sub.0.30] As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature...
Saved in:
Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-07, p.921 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of [In.sub.0.70][Al.sub.0.30]As/[In.sub.0.76][Ga.sub.0.24]As/[In.sub.0.70][Al.sub.0.30] As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov--de Haas effect are studied. The Shubnikov--de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances. DOI: 10.1134/S1063782615070131 |
---|---|
ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782615070131 |