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Site-controlled growth of single IpP QDs
The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate "defects" formed by a focused beam of [Ga.sup.+] ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 [(µm).sup.-2] can be obtained in the InP/GaInP system. It is demonstrated that effective lumine...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2015-08, p.1095 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The MOVPE growth of InP/GaInP quantum dots (QDs) on GaAs substrate "defects" formed by a focused beam of [Ga.sup.+] ions is studied. It is shown that ordered arrays of QDs with a density of 0.25 [(µm).sup.-2] can be obtained in the InP/GaInP system. It is demonstrated that effective luminescence can be obtained by using two QD sheets separated by a GaAs/GaInP buffer layer. DOI: 10.1134/S1063782615080230 |
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ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782615080230 |