Characterization of field-emission cathodes based on graphene films on SiC

The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are constructed in the Fowler–Nordheim coordinates; the w...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-09, Vol.49 (9), p.1242-1245
Main Authors: Konakova, R. V., Okhrimenko, O. B., Svetlichnyi, A. M., Ageev, O. A., Volkov, E. Yu, Kolomiytsev, A. S., Jityaev, I. L., Spiridonov, O. B.
Format: Article
Language:English
Subjects:
Chemical properties
Electric fields
Graphene
Graphite
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Physics of Semiconductor Devices
Silicon carbide
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Summary:The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are constructed in the Fowler–Nordheim coordinates; the work functions φ of the point cathode are calculated by their slope. The possibility of forming heavily doped n + -SiC on the point surface by the sublimation of low-threshold field emission cathodes with low threshold electric fields and field-emission currents is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615090146