Physical properties of carbon films obtained by methane pyrolysis in an electric field

A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate is exposed to C –4 ions during pyrolysis are measured. Ion bombardment generates nuclei in...

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Bibliographic Details
Published in:Technical physics 2016-03, Vol.61 (3), p.428-431
Main Authors: Brantov, S. K., Tereshchenko, A. N., Shteinman, E. A., Yakimov, E. B.
Format: Article
Language:English
Subjects:
Analysis
Classical and Continuum Physics
Electric fields
Electric properties
Methane
Physics
Physics and Astronomy
Physics of Nanostructures
Pyrolysis
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Summary:A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and temperature arising in a working chamber when the substrate is exposed to C –4 ions during pyrolysis are measured. Ion bombardment generates nuclei in the form of fibers about 2 μm in diameter providing the growth of a polycrystalline film. The resulting material is examined using electron microscopy and photo- and cathodoluminescence. Synthesized films are a composite material the matrix of which contains nanoclusters of a dissimilar crystalline nature. The effect of considerable two-stage decrease in the resistivity of the film material with increasing temperature from 300 to 1750 K is discovered. This points to the semiconducting properties of thick carbon films.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784216030051