Dependence of the spectra of charge carriers on the concentration of defects in silver telluride

A change in the band gap as a function of the concentration of electrically active defects in silver telluride has been considered. It has been found that the electronegative and electropositive defects lead to an increase and a decrease in the band gap , respectively. It has been revealed that, in...

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Bibliographic Details
Published in:Physics of the solid state 2015-07, Vol.57 (7), p.1325-1333
Main Authors: Aliev, F. F., Eminova, V. I.
Format: Article
Language:English
Subjects:
Physics
Physics and Astronomy
Semiconductors
Solid State Physics
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Summary:A change in the band gap as a function of the concentration of electrically active defects in silver telluride has been considered. It has been found that the electronegative and electropositive defects lead to an increase and a decrease in the band gap , respectively. It has been revealed that, in Ag 2 Te with Te concentrations of higher than or equal to 0.75 at %, the band gap has an unusually low value (∼0.008 eV). In the case where the band gap is characterized by the temperature dependence ɛ g = (0.008 −7 × 10 −5 T ) eV, at T > 100 K, there is a gapless state. Owing to the changes in the concentration of electrically active defects, silver telluride can exhibit n - and p -type conductivities, unlike other silver chalcogenides (Ag 2 S and Ag 2 Se).
ISSN:1063-7834
1090-6460
DOI:10.1134/S1063783415070033