Composition, morphology, and electronic structure of the nanophases created on the Si[O.sub.2] surface by [Ar.sup.+] ion bombardment

The influence of [Ar.sup.+] bombardment on the composition and the structure of the Si[O.sub.2]/Si surface is studied. A thin Si film is found to form on the Si[O.sub.2] surface subjected to high-dose ion bombardment. DOI: 10.1134/S1063784216040253

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Bibliographic Details
Published in:Technical physics 2016-04, p.628
Main Authors: Yusupjanova, M.B, Tashmukhamedova, D.A, Umirzakov, B.E
Format: Article
Language:English
Subjects:
Annealing
Dielectric films
Silicon
Thin films
Online Access:Get full text
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Summary:The influence of [Ar.sup.+] bombardment on the composition and the structure of the Si[O.sub.2]/Si surface is studied. A thin Si film is found to form on the Si[O.sub.2] surface subjected to high-dose ion bombardment. DOI: 10.1134/S1063784216040253
ISSN:1063-7842
DOI:10.1134/S1063784216040253