Peculiarities of Forming Single-Frequency Generation in a Monopulse YAG:Nd-Laser with Transverse Diode Pumping and Injection of Narrow-Band Radiation

• Published in: Journal of applied spectroscopy 2016-05, Vol.83 (2), p.194-197
• Main Authors: Bogdanovich, M. V., Kalinov, V. S., Kostik, O. E., Lantsov, K. I., Lepchenkov, K. V., Mashko, V. V., Ryabtsev, A. G., Ryabtsev, G. I., Teplyashin, L. L.
• Format: Article
• Language: English
• Subjects: Analytical Chemistry; Atomic/Molecular Structure and Spectra; Lasers; Physics; Physics and Astronomy; Radiation
• ISSN: 0021-9037; 1573-8647
• DOI: 10.1007/s10812-016-0268-3

The features of forming output radiation in a powerful monopulse single-frequency side diode-pumped laser operating in external narrow-band signal seeding mode were investigated. The monopulse single-frequency laser was fabricated of a YAG:Nd active element excited by three laser diode matrices. A compact continuous-wave YAG:Nd-laser with longitudinal diode pumping served as the seeding laser. It was shown experimentally that the transition of the monopulse laser from multimode to single-frequency lasing with a spectral line width of about 54 MHz (0.2 pm) occurs at seeding-laser radiation power P th ≈ 0.14 mW (radiation intensity of 1.8·10 –2 W/cm 2 ). Increasing the seeding-laser power over P th does not lead to a noticeable change of the output characteristics of the monopulse laser for a given pump level (above the threshold). If the pump power varies from 1.5 to 3.0 kW, the P th value is not changed but the energy of the output pulses of single-frequency monopulse generation increases to 40 MJ. The low level of the external narrow-band seeding signal allows us to consider the single-frequency low-power semiconductor laser as a promising source of the seeding signal.