Formation of the low-resistivity compound [Cu.sub.3]Ge by low-temperature treatment in an atomic hydrogen flux

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2016-09, Vol.50 (9), p.1236
• Main Authors: Erofeev, E.V, Kazimirov, A.I, Fedin, I.V, Kagadei, V.A
• Format: Article
• Language: English
• Subjects: Electric properties; Gallium arsenide; Hydrogen; Movies
• ISSN: 1063-7826
• DOI: 10.1134/S1063782616090086

The systematic features of the formation of the low-resistivity compound [Cu.sub.3]Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of [10.sup.15] at [cm.sup.2] [s.sup.-1] for 2.5-10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric [Cu.sub.3]Ge phase. The film consists of vertically oriented grains 100-150 nm in size and exhibits a minimum resistivity of 4.5 [micro][ohm] cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the [Cu.sub.3]Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of [Cu.sub.3]Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample. DOI: 10.1134/S1063782616090086