Influence of surface processing in a B[Cl.sub.3] plasma on the formation of ohmic contacts to AlGaN/GaN structures

Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a B[Cl.sub.3] plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The pr...

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Bibliographic Details
Published in:Technical physics 2017-03, Vol.62 (3), p.436
Main Authors: Andrianov, N.A, Kobelev, A.A, Smirnov, A.S, Barsukov, Yu. V, Zhukov, Yu. M
Format: Article
Language:English
Subjects:
Field effect transistors
Nitrides
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Summary:Conditions for the surface processing of a cap GaN layer in AlGaN/GaN high-electron-mobility transistor (HEMT) structures in a B[Cl.sub.3] plasma have been found. They make it possible to considerably reduce the resistance of ohmic contacts to Group III nitride-based field-effect transistors. The primary factor behind this effect is the noticeable lowering of a potential barrier on the GaN surface through the formation of nitrogen vacancies that act as donors and, correspondingly, a rise in the surface concentration of electrons. DOI: 10.1134/S1063784217030033
ISSN:1063-7842
DOI:10.1134/S1063784217030033