Effect of Charged Clusters on the Diffusion of Impurity Atoms in Silicon Crystals

An equation of diffusion of impurity atoms in silicon crystals has been obtained, based on which the influence of charged clusters in a silicon crystal on the process of impurity transfer can be determined. It is shown that a characteristic feature of this effect is the appearance of an additional f...

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Bibliographic Details
Published in:Journal of engineering physics and thermophysics 2017-05, Vol.90 (3), p.725-728
Main Author: Velichko, O. I.
Format: Article
Language:English
Subjects:
Annealing
Classical Mechanics
Complex Systems
Engineering
Engineering Thermodynamics
Heat and Mass Transfer
Industrial Chemistry/Chemical Engineering
Silicon
Thermodynamics
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Summary:An equation of diffusion of impurity atoms in silicon crystals has been obtained, based on which the influence of charged clusters in a silicon crystal on the process of impurity transfer can be determined. It is shown that a characteristic feature of this effect is the appearance of an additional flux of impurity atoms, which is capable of leading to impurity segregation.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-017-1621-y