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Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAsp-i-n Structures on the Relaxation time of Nonequilibrium Carriers
The results of an experimental study of the capacitance-voltage (C-V) characteristics and deep-level transient spectroscopy (DLTS) spectra of [P.sup.+]-[P.sup.0]-i-[n.sup.0] homostructures based on undoped dislocation-free GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2018-02, Vol.52 (2), p.165 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The results of an experimental study of the capacitance-voltage (C-V) characteristics and deep-level transient spectroscopy (DLTS) spectra of [P.sup.+]-[P.sup.0]-i-[n.sup.0] homostructures based on undoped dislocation-free GaAs layers and InGaAs/GaAs and GaAsSb/GaAs heterostructures with homogeneous networks of misfit dislocations, all grown by liquid-phase epitaxy (LPE), are presented. Deep-level acceptor defects identified as HL2 and HL5 are found in the epitaxial [p.sup.0] and [n.sup.0] layers of the GaAs-based structure. The electron and hole dislocation-related deep levels, designated as, respectively, ED1 and HD3, are detected in InGaAs/GaAs and GaAsSb/GaAs heterostructures. The following hole trap parameters: thermal activation energies ([E.sub.t]), capture cross sections ([[sigma].sub.p]), and concentrations ([N.sub.t]) are calculated from the Arrhenius dependences to be [E.sub.t] = 845 meV, [[sigma].sub.p] = 1.33 x [10.sup.-12] [cm.sup.2], [N.sub.t] = 3.80 x [10.sup.14] [cm.sup.-3] for InGaAs/GaAs and [E.sub.t] = 848 meV, [[sigma].sub.p] = 2.73 x [10.sup.-12] [cm.sup.2], [N.sub.t] = 2.40 x [10.sup.14] [cm.sup.-3] for GaAsSb/GaAs heterostructures. The concentration relaxation times of nonequilibrium carriers are estimated for the case in which dislocation-related deep acceptor traps are involved in this process. These are 2 x [10.sup.-10] s and 1.5 x [10.sup.-10] s for, respectively, the InGaAs/GaAs and GaAsSb/GaAs heterostructures and 1.6 x [10.sup.-6] s for the GaAs homostructures. DOI: 10.1134/S1063782618020173 |
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ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782618020173 |