Optimization of the Structural Properties and Surface Morphology of a Convex-Graded [In.sub.x][Al.sub.1 - x]As

The results of optimization of the design and growth conditions of an [In.sub.x][Al.sub.1 - x]As metamorphic buffer layer with a high In content (x = 0.05-0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties an...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2018-01, Vol.52 (1), p.120
Main Authors: Solov'ev, V.A, Chernov, M.Yu, Sitnikova, A.A, Brunkov, P.N, Meltser, B.Ya, Ivanov, S.V
Format: Article
Language:English
Subjects:
Epitaxy
Gallium arsenide
Quantum wells
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container_title Semiconductors (Woodbury, N.Y.)
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creator Solov'ev, V.A
Chernov, M.Yu
Sitnikova, A.A
Brunkov, P.N
Meltser, B.Ya
Ivanov, S.V
description The results of optimization of the design and growth conditions of an [In.sub.x][Al.sub.1 - x]As metamorphic buffer layer with a high In content (x = 0.05-0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 x 10 [micro]m) and density of threading dislocations of 5 x [10.sup.7] [cm.sup.-2] are found in the samples with a convex-graded metamorphic buffer layer. DOI: 10.1134/S1063782618010232
doi_str_mv 10.1134/S1063782618010232
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Gallium arsenide
Quantum wells
title Optimization of the Structural Properties and Surface Morphology of a Convex-Graded [In.sub.x][Al.sub.1 - x]As
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