Production of Amorphous and Nanocrystalline Silicon Films by the Hot-Wire Activation Method

Thin films of amorphous silicon with inclusions of a nanocrystalline silicon phase have been obtained by the method of gas-phase chemical deposition with hot-wire activation of the precursor. The influence of the gas pressure and of the hydrogen–monosilane ratio on the rate of growth and the degree...

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Bibliographic Details
Published in:Journal of engineering physics and thermophysics 2015-07, Vol.88 (4), p.1003-1007
Main Authors: Andreev, M. N., Rebrov, A. K., Safonov, A. I., Timoshenko, N. I., Kubrak, K. V., Sulyaeva, V. S.
Format: Article
Language:English
Subjects:
Classical Mechanics
Complex Systems
Engineering
Engineering Thermodynamics
Heat and Mass Transfer
Hydrogen
Industrial Chemistry/Chemical Engineering
Methods
Production processes
Silanes
Silicon
Solar energy
Thermodynamics
Thin films
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Summary:Thin films of amorphous silicon with inclusions of a nanocrystalline silicon phase have been obtained by the method of gas-phase chemical deposition with hot-wire activation of the precursor. The influence of the gas pressure and of the hydrogen–monosilane ratio on the rate of growth and the degree of crystallinity of the deposited silicon has been investigated. Characteristic values of the synthesis parameters for obtaining silicon films of various degrees of crystallinity have been established.
ISSN:1062-0125
1573-871X
DOI:10.1007/s10891-015-1277-4