SCHOTKY BARRIER HEIGHT AND CALCULATION OF VOLTAGE-CURRENT CHARACTERISTICS OF Al/n-[.sub.x] DIODES AND 4H-SiC HETEROJUNCTIONS

The Schottky barrier heights in the M/n-[(SiC).sub.1-x][(AlN).sub.x] systems are obtained on the assumption of a high density of surface states in the region of the metal (M)--SiC-AlN-solid solution contact. Current-voltage (I-V) characteristics of the Al/n-[(SiC).sub.1-x][(AlN).sub.x] diodes are ca...

Full description

Saved in:
Bibliographic Details
Published in:Russian physics journal 2020-01, Vol.62 (9), p.1663
Main Authors: Altukhov, V.I, Sankin, A.V, Antonov, V.F, Filipova, S.V, Mityugova, O.A
Format: Article
Language:English
Subjects:
Aluminum compounds
Analysis
Silicon carbide
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The Schottky barrier heights in the M/n-[(SiC).sub.1-x][(AlN).sub.x] systems are obtained on the assumption of a high density of surface states in the region of the metal (M)--SiC-AlN-solid solution contact. Current-voltage (I-V) characteristics of the Al/n-[(SiC).sub.1-x][(AlN).sub.x] diodes are calculated. It is shown that at moderate concentrations of surface states (c [approximately equal to] 4-8), the Schottky barrier height [[PHI].sup.z.sub.B](c) of these diodes is close to the heterojunction potential barrier [[PHI].sup.x.sub.g], which is the reason for the known similarity in the behavior of the corresponding I-V characteristics. The role of the ideality factors in the behavior of the I-V characteristics is analyzed. The obtained values of the Schottky barrier heights are in accordance with experimental data. Keywords: Schottky barrier, SiC solid solutions, I-V characteristics of diodes, composite model, emission currents.
ISSN:1064-8887
DOI:10.1007/s11182-020-01889-9