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Features of the Electrical-Conductivity Mechanism in [gamma]-Irradiated TlInSe.sub.2 Single Crystals under Hydrostatic Pressure
The effect of hydrostatic pressure to 10 kbar on the conductivity of [gamma]-irradiated chain TlInSe.sub.2 single crystals with a resistivity of ~10.sup.8 Ω cm is studied. It is found that the observed conductivity anomalies of TlInSe.sub.2 samples irradiated at doses of D < 100 krad and D >...
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Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1180 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | The effect of hydrostatic pressure to 10 kbar on the conductivity of [gamma]-irradiated chain TlInSe.sub.2 single crystals with a resistivity of ~10.sup.8 Ω cm is studied. It is found that the observed conductivity anomalies of TlInSe.sub.2 samples irradiated at doses of D < 100 krad and D > 100 krad are associated with the ordered transformation of defects including interstitial cations and anions. The nature of the anomalous change and pressure dependences of the resistivity [sigma](P) in the irradiated samples suggest that pressure causes local energy levels due to macroscopic clusters of radiation-induced defects, with the result that the Fermi-level energy and carrier concentration change. |
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ISSN: | 1063-7826 |
DOI: | 10.1134/S1063782620100206 |