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Alterations in Surface Roughness and Chemical Characteristics of Sandblasted and Acid-Etched Titanium Implants after Irradiation with Different Diode Lasers

The purpose of this study was to evaluate the effects of diode laser irradiation with different wavelengths on the surface roughness (Ra) and chemical composition of sandblasted and acid-etched (SLA) titanium implants. Three types of diode lasers with different wavelengths were irradiated on the tit...

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Bibliographic Details
Published in:Applied Sciences 2020, Vol.10 (12)
Main Authors: Kim, Hak-Ki, Park, Su-Yeon, Son, Keunbada, Kim, Yong-Gun, Yu, Won-Jae, Lee, Kyu-Bok, Lee, Jae-Mok
Format: Report
Language:English
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Summary:The purpose of this study was to evaluate the effects of diode laser irradiation with different wavelengths on the surface roughness (Ra) and chemical composition of sandblasted and acid-etched (SLA) titanium implants. Three types of diode lasers with different wavelengths were irradiated on the titanium implants at output powers of 1.0, 2.0, and 3.0 W. The mean Ra values for all spots were measured using a scanning probe microscope. Analysis of variance tests were performed to verify the differences in the Ra between groups according to the type of lasers or power out ([alpha]0 = 0.05). For analyzing chemical composition, atomic and weight percent ratios of titanium, oxygen, and carbon were measured using energy-dispersive spectrometry (EDS). The mean Ra of titanium disc was higher in the 3.0-W output than in 1.0-W or 2.0-W output, but there was no statistically significant difference (p > 0.05). In EDS analysis, it was difficult to find a clear difference in the titanium, oxygen, and carbon element ratios between the laser-irradiated and nonirradiated groups. The irradiation of diode laser with 1.0, 2.0, and 3.0 W output for 15 s decontaminated the SLA titanium surface without damage. However, additional clinical trials will be needed to verify the results of the present study. Keywords: dental implant; titanium; lasers; semiconductor; microscopy; spectrum analysis
ISSN:2076-3417
2076-3417
DOI:10.3390/appl0124167