Ar Ion Irradiation Effects on the Characteristics of Ru|Pt|n-GaN Schottky Barrier Diodes

The present study reports the effects of 650-keV Ar 2+ ion irradiation on the structural, optical, and device characteristics of Ru|Pt| n -GaN Schottky barrier diodes (SBDs). Ion irradiation induces the broadening of the GaN X-ray diffraction peaks due to induced structural deformities. The photolum...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (12), p.1641-1649
Main Authors: Kumar, S., Mariswamy, V. Kumar, Kumar, A., Kandasami, A., Nimmala, A., Rao, S. V. S. Nageswara, Reddy, V. Rajagopal, Sannathammegowda, K.
Format: Article
Language:English
Subjects:
Circuit components
Diffraction
Electric properties
Liquors
Magnetic Materials
Magnetism
Photoluminescence
Physics
Physics and Astronomy
Physics of Semiconductor Devices
X-rays
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The present study reports the effects of 650-keV Ar 2+ ion irradiation on the structural, optical, and device characteristics of Ru|Pt| n -GaN Schottky barrier diodes (SBDs). Ion irradiation induces the broadening of the GaN X-ray diffraction peaks due to induced structural deformities. The photoluminescence spectroscopy intensity decreases with the increase in the fluence of ions. The recombination of charge carriers induced by the geometrical distortions, and the formation of defects states, shifts the peak positions to shorter wavelengths. The electrical characteristics of these devices exhibit significant changes due to modification at the interface and charge transport properties after Ar 2+ ion irradiation. The charge-transport properties are affected by these deformities at higher fluences and attributed to the contributions of various current conduction mechanisms, including defect-assisted tunnelling and generation–recombination (G–R) currents along with thermionic emission.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620120155