Structure, Composition, and Properties of Zn- and O-Ion Implanted Silicon at Elevated Temperatures

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (12), p.1650-1656
• Main Authors: Privezentsev, V. V., Sergeev, A. P., Kulikauskas, V. S., Kiselev, D. A., Trifonov, A. Yu, Tereshchenko, A. N.
• Format: Article
• Language: English
• Subjects: Annealing; Fabrication; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Silicon; Testing of Materials and Structures; Treatment; Zinc compounds
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782620120313

Czochralski-grown Si substrates ( n -type, orientation (100)) are subjected to double implantation, notably, initially by 64 Zn + ions with a dose of 5 × 10 16 cm –2 and an energy of 50 keV and then with 16 O + ions with a dose of 2 × 10 17 cm –2 and an energy of 20 keV. The substrates during implantation are held at ~350°C. The implanted Si substrates contain radiation-induced defects and their clusters such as twins, dislocations, and nanoclusters, notably, Zn-containing nanoclusters with an average radius of 10–50 nm predominantly consisting of the metallic Zn phase and partially from the ZnO phase formed on the surface and in the substrate near-surface layer. Photonic annealing to an effective temperature of 700°C optimal for the formation of the ZnO phase leads to the annealing of radiation-induced defects, and Zn-containing nanoclusters presumably consisting of the ZnO phase and partially of the Zn 2 SiO 4 phase with an average diameter of 50–100 nm are recorded on the sample surface.