Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)

The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantu...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-12, Vol.54 (12), p.1527-1547
Main Authors: Mikhailova, M. P., Ivanov, E. V., Danilov, L. V., Kalinina, K. V., Yakovlev, Yu. P., Kop’ev, P. S.
Format: Article
Language:English
Subjects:
Electric fields
Ionization
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum wells
Review
Semiconductors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03
cites cdi_FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03
container_end_page 1547
container_issue 12
container_start_page 1527
container_title Semiconductors (Woodbury, N.Y.)
container_volume 54
creator Mikhailova, M. P.
Ivanov, E. V.
Danilov, L. V.
Kalinina, K. V.
Yakovlev, Yu. P.
Kop’ev, P. S.
description The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantum efficiency and luminescence optical power in all the investigated structures is caused by a common physical mechanism, specifically, the creation of additional electron–hole pairs during impact ionization by hot carriers heated at the high band offset at the heterointerface under current pumping or by the multiplication of carriers in nanocrystals upon multiexciton generation under illumination by high-energy photons.
doi_str_mv 10.1134/S1063782620120210
format article
fullrecord <record><control><sourceid>gale_cross</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A650996185</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A650996185</galeid><sourcerecordid>A650996185</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03</originalsourceid><addsrcrecordid>eNp9kMFKAzEQhoMoWKsP4G2Petg6STbJ5liK1kJRaBW8LdlstqR0k5JsK_r0pqw3QeYw88_MN8wMQrcYJhjT4mGNgVNREk4AEyAYztAIg4ScF0Ken2JO81P9El3FuAXAuGTFCH2sVGNVb48mWxntu9q6pLzLlGuyRbdXus8W3tnvIWtdtjad1d41B937kL0o52MfkjgEE7M7lcYcrfm8v0YXrdpFc_Prx-j96fFt9pwvX-eL2XSZa0pEn9ctFcAE50KVQgOtGREE163UuCYUGNGEm5rUIDWVLSGMlVJhEKIwgqkEjNFkmLtRO1NZ1_o-KJ2sGfY0rU35KWcgJU83JwAPgA4-xmDaah9sp8JXhaE6_bL688vEkIGJqddtTKi2_hBcuusf6Ae5HnUf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)</title><source>Springer Link</source><creator>Mikhailova, M. P. ; Ivanov, E. V. ; Danilov, L. V. ; Kalinina, K. V. ; Yakovlev, Yu. P. ; Kop’ev, P. S.</creator><creatorcontrib>Mikhailova, M. P. ; Ivanov, E. V. ; Danilov, L. V. ; Kalinina, K. V. ; Yakovlev, Yu. P. ; Kop’ev, P. S.</creatorcontrib><description>The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantum efficiency and luminescence optical power in all the investigated structures is caused by a common physical mechanism, specifically, the creation of additional electron–hole pairs during impact ionization by hot carriers heated at the high band offset at the heterointerface under current pumping or by the multiplication of carriers in nanocrystals upon multiexciton generation under illumination by high-energy photons.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620120210</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Electric fields ; Ionization ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Quantum wells ; Review ; Semiconductors</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1527-1547</ispartof><rights>Pleiades Publishing, Ltd. 2020. ISSN 1063-7826, Semiconductors, 2020, Vol. 54, No. 12, pp. 1527–1547. © Pleiades Publishing, Ltd., 2020. Russian Text © The Author(s), 2020, published in Fizika i Tekhnika Poluprovodnikov, 2020, Vol. 54, No. 12, pp. 1267–1288.</rights><rights>COPYRIGHT 2020 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03</citedby><cites>FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Mikhailova, M. P.</creatorcontrib><creatorcontrib>Ivanov, E. V.</creatorcontrib><creatorcontrib>Danilov, L. V.</creatorcontrib><creatorcontrib>Kalinina, K. V.</creatorcontrib><creatorcontrib>Yakovlev, Yu. P.</creatorcontrib><creatorcontrib>Kop’ev, P. S.</creatorcontrib><title>Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantum efficiency and luminescence optical power in all the investigated structures is caused by a common physical mechanism, specifically, the creation of additional electron–hole pairs during impact ionization by hot carriers heated at the high band offset at the heterointerface under current pumping or by the multiplication of carriers in nanocrystals upon multiexciton generation under illumination by high-energy photons.</description><subject>Electric fields</subject><subject>Ionization</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum wells</subject><subject>Review</subject><subject>Semiconductors</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKAzEQhoMoWKsP4G2Petg6STbJ5liK1kJRaBW8LdlstqR0k5JsK_r0pqw3QeYw88_MN8wMQrcYJhjT4mGNgVNREk4AEyAYztAIg4ScF0Ken2JO81P9El3FuAXAuGTFCH2sVGNVb48mWxntu9q6pLzLlGuyRbdXus8W3tnvIWtdtjad1d41B937kL0o52MfkjgEE7M7lcYcrfm8v0YXrdpFc_Prx-j96fFt9pwvX-eL2XSZa0pEn9ctFcAE50KVQgOtGREE163UuCYUGNGEm5rUIDWVLSGMlVJhEKIwgqkEjNFkmLtRO1NZ1_o-KJ2sGfY0rU35KWcgJU83JwAPgA4-xmDaah9sp8JXhaE6_bL688vEkIGJqddtTKi2_hBcuusf6Ae5HnUf</recordid><startdate>20201201</startdate><enddate>20201201</enddate><creator>Mikhailova, M. P.</creator><creator>Ivanov, E. V.</creator><creator>Danilov, L. V.</creator><creator>Kalinina, K. V.</creator><creator>Yakovlev, Yu. P.</creator><creator>Kop’ev, P. S.</creator><general>Pleiades Publishing</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20201201</creationdate><title>Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)</title><author>Mikhailova, M. P. ; Ivanov, E. V. ; Danilov, L. V. ; Kalinina, K. V. ; Yakovlev, Yu. P. ; Kop’ev, P. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Electric fields</topic><topic>Ionization</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum wells</topic><topic>Review</topic><topic>Semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mikhailova, M. P.</creatorcontrib><creatorcontrib>Ivanov, E. V.</creatorcontrib><creatorcontrib>Danilov, L. V.</creatorcontrib><creatorcontrib>Kalinina, K. V.</creatorcontrib><creatorcontrib>Yakovlev, Yu. P.</creatorcontrib><creatorcontrib>Kop’ev, P. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mikhailova, M. P.</au><au>Ivanov, E. V.</au><au>Danilov, L. V.</au><au>Kalinina, K. V.</au><au>Yakovlev, Yu. P.</au><au>Kop’ev, P. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-12-01</date><risdate>2020</risdate><volume>54</volume><issue>12</issue><spage>1527</spage><epage>1547</epage><pages>1527-1547</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The processes of radiative recombination and impact ionization in light-emitting structures based on bulk semiconductors, heterostructures with high potential barriers, nanostructures with deep quantum wells, and nanocrystals with quantum dots are reviewed. It is shown that enhancement of the quantum efficiency and luminescence optical power in all the investigated structures is caused by a common physical mechanism, specifically, the creation of additional electron–hole pairs during impact ionization by hot carriers heated at the high band offset at the heterointerface under current pumping or by the multiplication of carriers in nanocrystals upon multiexciton generation under illumination by high-energy photons.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620120210</doi><tpages>21</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (12), p.1527-1547
issn 1063-7826
1090-6479
language eng
recordid cdi_gale_infotracacademiconefile_A650996185
source Springer Link
subjects Electric fields
Ionization
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum wells
Review
Semiconductors
title Radiative Recombination and Impact Ionization in Semiconductor Nanostructures (a Review)
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T08%3A43%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radiative%20Recombination%20and%20Impact%20Ionization%20in%20Semiconductor%20Nanostructures%20(a%20Review)&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Mikhailova,%20M.%20P.&rft.date=2020-12-01&rft.volume=54&rft.issue=12&rft.spage=1527&rft.epage=1547&rft.pages=1527-1547&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782620120210&rft_dat=%3Cgale_cross%3EA650996185%3C/gale_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c327t-bf37057667a87c03b52721bf9c1b23052c26eb2b09c39f225589a10774e75ac03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A650996185&rfr_iscdi=true