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Investigation of Electrophysical Properties of ITO Films
The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperatur...
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| Published in: | Russian physics journal 2020-11, Vol.63 (7), p.1139-1143 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53 |
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| cites | cdi_FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53 |
| container_end_page | 1143 |
| container_issue | 7 |
| container_start_page | 1139 |
| container_title | Russian physics journal |
| container_volume | 63 |
| creator | Zhidik, Yu. S. Troyan, P. E. Kozik, V. V. Kozyukhin, S. A. Zabolotskaya, A. V. Kuznetsova, S. A. |
| description | The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one. |
| doi_str_mv | 10.1007/s11182-020-02167-4 |
| format | article |
| fullrecord | <record><control><sourceid>gale_cross</sourceid><recordid>TN_cdi_gale_infotracacademiconefile_A681647477</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A681647477</galeid><sourcerecordid>A681647477</sourcerecordid><originalsourceid>FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53</originalsourceid><addsrcrecordid>eNp9kM9KAzEQxoMoWKsv4GlfYGsmyebPsZRWC4V6qOcQssmast2UZBX69qauZxmG-ZiZ38B8CD0DXgDG4iUDgCQ1JrgkcFGzGzSDRtBaESJvi8ac1VJKcY8ecj5iXDAuZkhuh2-Xx9CZMcShir5a986OKZ4_LzlY01fvRbs0Bpev0-1hX21Cf8qP6M6bPrunvzpHH5v1YfVW7_av29VyV1tK8VgD4xYza4kkopXKSWWoAq8Y8c5SRYC1EoMFUA1vKeeYexCqAQ6Etco1dI4W093O9E6HwccxGVuidadg4-B8KP0ll8CZYEIUgEyATTHn5Lw-p3Ay6aIB66tZejJLF7P0r1maFYhOUC7LQ-eSPsavNJTH_qN-AL_8aoo</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Electrophysical Properties of ITO Films</title><source>Springer Nature</source><creator>Zhidik, Yu. S. ; Troyan, P. E. ; Kozik, V. V. ; Kozyukhin, S. A. ; Zabolotskaya, A. V. ; Kuznetsova, S. A.</creator><creatorcontrib>Zhidik, Yu. S. ; Troyan, P. E. ; Kozik, V. V. ; Kozyukhin, S. A. ; Zabolotskaya, A. V. ; Kuznetsova, S. A.</creatorcontrib><description>The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.</description><identifier>ISSN: 1064-8887</identifier><identifier>EISSN: 1573-9228</identifier><identifier>DOI: 10.1007/s11182-020-02167-4</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Analysis ; Annealing ; Condensed Matter Physics ; Crystals ; Electric properties ; Electrical conductivity ; Electrons ; Hadrons ; Heavy Ions ; Investigations ; Lasers ; Mathematical and Computational Physics ; Nuclear Physics ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Physics of Semiconductors and Dielectrics ; Semiconductors ; Structure ; Theoretical</subject><ispartof>Russian physics journal, 2020-11, Vol.63 (7), p.1139-1143</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>COPYRIGHT 2021 Springer</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53</citedby><cites>FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhidik, Yu. S.</creatorcontrib><creatorcontrib>Troyan, P. E.</creatorcontrib><creatorcontrib>Kozik, V. V.</creatorcontrib><creatorcontrib>Kozyukhin, S. A.</creatorcontrib><creatorcontrib>Zabolotskaya, A. V.</creatorcontrib><creatorcontrib>Kuznetsova, S. A.</creatorcontrib><title>Investigation of Electrophysical Properties of ITO Films</title><title>Russian physics journal</title><addtitle>Russ Phys J</addtitle><description>The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.</description><subject>Analysis</subject><subject>Annealing</subject><subject>Condensed Matter Physics</subject><subject>Crystals</subject><subject>Electric properties</subject><subject>Electrical conductivity</subject><subject>Electrons</subject><subject>Hadrons</subject><subject>Heavy Ions</subject><subject>Investigations</subject><subject>Lasers</subject><subject>Mathematical and Computational Physics</subject><subject>Nuclear Physics</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductors and Dielectrics</subject><subject>Semiconductors</subject><subject>Structure</subject><subject>Theoretical</subject><issn>1064-8887</issn><issn>1573-9228</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQxoMoWKsv4GlfYGsmyebPsZRWC4V6qOcQssmast2UZBX69qauZxmG-ZiZ38B8CD0DXgDG4iUDgCQ1JrgkcFGzGzSDRtBaESJvi8ac1VJKcY8ecj5iXDAuZkhuh2-Xx9CZMcShir5a986OKZ4_LzlY01fvRbs0Bpev0-1hX21Cf8qP6M6bPrunvzpHH5v1YfVW7_av29VyV1tK8VgD4xYza4kkopXKSWWoAq8Y8c5SRYC1EoMFUA1vKeeYexCqAQ6Etco1dI4W093O9E6HwccxGVuidadg4-B8KP0ll8CZYEIUgEyATTHn5Lw-p3Ay6aIB66tZejJLF7P0r1maFYhOUC7LQ-eSPsavNJTH_qN-AL_8aoo</recordid><startdate>20201101</startdate><enddate>20201101</enddate><creator>Zhidik, Yu. S.</creator><creator>Troyan, P. E.</creator><creator>Kozik, V. V.</creator><creator>Kozyukhin, S. A.</creator><creator>Zabolotskaya, A. V.</creator><creator>Kuznetsova, S. A.</creator><general>Springer US</general><general>Springer</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20201101</creationdate><title>Investigation of Electrophysical Properties of ITO Films</title><author>Zhidik, Yu. S. ; Troyan, P. E. ; Kozik, V. V. ; Kozyukhin, S. A. ; Zabolotskaya, A. V. ; Kuznetsova, S. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Analysis</topic><topic>Annealing</topic><topic>Condensed Matter Physics</topic><topic>Crystals</topic><topic>Electric properties</topic><topic>Electrical conductivity</topic><topic>Electrons</topic><topic>Hadrons</topic><topic>Heavy Ions</topic><topic>Investigations</topic><topic>Lasers</topic><topic>Mathematical and Computational Physics</topic><topic>Nuclear Physics</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductors and Dielectrics</topic><topic>Semiconductors</topic><topic>Structure</topic><topic>Theoretical</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhidik, Yu. S.</creatorcontrib><creatorcontrib>Troyan, P. E.</creatorcontrib><creatorcontrib>Kozik, V. V.</creatorcontrib><creatorcontrib>Kozyukhin, S. A.</creatorcontrib><creatorcontrib>Zabolotskaya, A. V.</creatorcontrib><creatorcontrib>Kuznetsova, S. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Russian physics journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhidik, Yu. S.</au><au>Troyan, P. E.</au><au>Kozik, V. V.</au><au>Kozyukhin, S. A.</au><au>Zabolotskaya, A. V.</au><au>Kuznetsova, S. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Electrophysical Properties of ITO Films</atitle><jtitle>Russian physics journal</jtitle><stitle>Russ Phys J</stitle><date>2020-11-01</date><risdate>2020</risdate><volume>63</volume><issue>7</issue><spage>1139</spage><epage>1143</epage><pages>1139-1143</pages><issn>1064-8887</issn><eissn>1573-9228</eissn><abstract>The results of a study of the electrophysical characteristics of ITO films obtained by magnetron sputtering are presented. It is shown that a significant increase in the electrical conductivity of ITO films is facilitated by high-temperature annealing due to two processes. First, the high-temperature treatment of ITO films after their synthesis promotes the formation of a crystal structure, which leads to an increase in the mobility of charge carriers. Second, as a result of high-temperature annealing, the impurity in ITO films becomes completely electrically active, which leads to an increase in the concentration of conduction electrons and a change of the semiconductor mechanism of electrical conductivity to the metallic one.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11182-020-02167-4</doi><tpages>5</tpages></addata></record> |
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| ispartof | Russian physics journal, 2020-11, Vol.63 (7), p.1139-1143 |
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| language | eng |
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| source | Springer Nature |
| subjects | Analysis Annealing Condensed Matter Physics Crystals Electric properties Electrical conductivity Electrons Hadrons Heavy Ions Investigations Lasers Mathematical and Computational Physics Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Physics of Semiconductors and Dielectrics Semiconductors Structure Theoretical |
| title | Investigation of Electrophysical Properties of ITO Films |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T23%3A14%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Electrophysical%20Properties%20of%20ITO%20Films&rft.jtitle=Russian%20physics%20journal&rft.au=Zhidik,%20Yu.%20S.&rft.date=2020-11-01&rft.volume=63&rft.issue=7&rft.spage=1139&rft.epage=1143&rft.pages=1139-1143&rft.issn=1064-8887&rft.eissn=1573-9228&rft_id=info:doi/10.1007/s11182-020-02167-4&rft_dat=%3Cgale_cross%3EA681647477%3C/gale_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c330t-146c04cc2827d89e89a391f942fec39214d801c11956d36606f179516124d9e53%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_galeid=A681647477&rfr_iscdi=true |