Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO[sub.X]/TaN Memristors

In this work, we fabricated an ITO/WO[sub.X]/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10[sup.4] cycles), a high on/off ratio (>10), and lo...

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Bibliographic Details
Published in:Materials 2023-02, Vol.16 (4)
Main Authors: Cho, Youngboo, Kim, Jihyung, Kang, Myounggon, Kim, Sungjun
Format: Article
Language:English
Subjects:
Complementary metal oxide semiconductors
Flash memory
Memristors
Semiconductor industry
Online Access:Get full text
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Summary:In this work, we fabricated an ITO/WO[sub.X]/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10[sup.4] cycles), a high on/off ratio (>10), and long retention (>10[sup.4] s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WO[sub.X]-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16041687