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Mn- and Yb-Doped BaTiO[sub.3]-TiO[sub.3] Ferroelectric Relaxor with Low Dielectric Loss

In this work, a Mn-and Yb-doped BaTiO[sub.3]-(Na[sub.0.5]Bi[sub.0.5])TiO[sub.3] ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structur...

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Bibliographic Details
Published in:Materials 2023-03, Vol.16 (6)
Main Authors: Gui, Dong-Yun, Ma, Xiao-Yong, Yuan, Hu-Die, Wang, Chun-Hai
Format: Article
Language:English
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Summary:In this work, a Mn-and Yb-doped BaTiO[sub.3]-(Na[sub.0.5]Bi[sub.0.5])TiO[sub.3] ferroelectric relaxor was designed and prepared. The effects of Mn on the microstructures, dielectric and electrical properties of the ceramics were investigated. The X-ray structural analysis shows a perovskite structure. The SEM images show the homogeneous microstructure of ceramics with an average grain size of about 1 μm. The temperature-dependent permittivity shows relaxor characteristics as Mn-doped. Mn at a low level (x ≤ 0.005) is beneficial for low dielectric loss and high resistivity. The maximum resistivity of ≥3 × 10[sup.12] Ω cm and minimum dielectric loss of ≤0.06 can be achieved at x ≤ 0.005. The resistivity of the ceramics follows the Arrhenius law with activation energy decreasing from ~1.31 to 1.01 eV as x increases. With lower Mn dopant, oxygen vacancies and charge carrier concentration partially decrease with Mn doping, which is helpful to improve the insulation resistance and decrease the dielectric loss.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma16062229