ILg/I = 50 nm Gate-All-Around InI0.53/IGaI0.47/IAs Nanosheet MOSFETs with Regrown InI0.53/IGaI0.47/IAs Contacts

• Published in: Electronics (Basel) 2022-08, Vol.11 (17)
• Main Authors: Lee, In-Geun, Jo, Hyeon-Bhin, Baek, Ji-Min, Lee, Sang-Tae, Choi, Su-Min, Kim, Hyo-Jin, Park, Wan-Soo, Yoo, Ji-Hoon, Ko, Dae-Hong, Kim, Tae-Woo, Kim, Sang-Kuk, Kim, Jae-Gyu, Yun, Jacob, Kim, Ted, Lee, Jung-Hee, Shin, Chan-Soo, Lee, Jae-Hak, Seo, Kwang-Seok, Kim, Dae-Hyun
• Format: Article
• Language: English
• Subjects: Circuit design; Design and construction; Integrated circuit fabrication; Metal oxide semiconductor field effect transistors; Methods
• ISSN: 2079-9292; 2079-9292
• DOI: 10.3390/electronics11172744

In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at V[sub.DS] = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.