Atomic Layer Deposition of La[sub.2]O[sub.3] Film with Precursor La[sub.3]-DMEA

In this paper, a new precursor La(thd)[sub.3] -DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with [sup.1] H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)[sub.3] -DMEA were checked by thermogravim...

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Published in:Coatings (Basel) 2023-05, Vol.13 (5)
Main Authors: Zhao, Wenyong, Jiang, Jie, Luo, Yawen, Li, Jiahao, Ding, Yuqiang
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Coating processes
Lanthanum
Methods
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Luo, Yawen
Li, Jiahao
Ding, Yuqiang
description In this paper, a new precursor La(thd)[sub.3] -DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with [sup.1] H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)[sub.3] -DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)[sub.3] -DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La[sub.2] O[sub.3] films on a SiO[sub.2] surface with La(thd)[sub.3] -DMEA and O[sub.3] as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La[sub.2] O[sub.3] films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)[sub.3] -DMEA is a suitable precursor for the atomic layer deposition of La[sub.2] O[sub.3] film.
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The thermal properties of La(thd)[sub.3] -DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)[sub.3] -DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La[sub.2] O[sub.3] films on a SiO[sub.2] surface with La(thd)[sub.3] -DMEA and O[sub.3] as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La[sub.2] O[sub.3] films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. 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The thermal properties of La(thd)[sub.3] -DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)[sub.3] -DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La[sub.2] O[sub.3] films on a SiO[sub.2] surface with La(thd)[sub.3] -DMEA and O[sub.3] as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La[sub.2] O[sub.3] films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. 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The thermal properties of La(thd)[sub.3] -DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)[sub.3] -DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La[sub.2] O[sub.3] films on a SiO[sub.2] surface with La(thd)[sub.3] -DMEA and O[sub.3] as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La[sub.2] O[sub.3] films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)[sub.3] -DMEA is a suitable precursor for the atomic layer deposition of La[sub.2] O[sub.3] film.</abstract><pub>MDPI AG</pub><doi>10.3390/coatings13050870</doi></addata></record>
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title Atomic Layer Deposition of La[sub.2]O[sub.3] Film with Precursor La[sub.3]-DMEA
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