Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN[sub.x] Gate Dielectric at Different Temperatures

In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN[sub.x] gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the thresh...

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Bibliographic Details
Published in:Micromachines (Basel) 2024-01, Vol.15 (2)
Main Authors: Zhao, Dongsheng, He, Liang, Wu, Lijuan, Xiao, Qingzhong, Liu, Chang, Chen, Yuan, He, Zhiyuan, Yang, Deqiang, Lv, Mingen, Cheng, Zijun
Format: Article
Language:English
Subjects:
Gallium nitrate
Hydrogen
Liquors
Mechanization, Military
Military paraphernalia
Nitrides
Semiconductors
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Summary:In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN[sub.x] gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the threshold voltage V[sub.TH] of the original device was positively shifted from −16.98 V to −11.53 V, and the positive bias of threshold was 5.45 V. When the V[sub.DS] was swept from 0 to 1 V with V[sub.GS] of 0 V, the I[sub.DS] was reduced by 25% from 9.45 A to 7.08 A. (2) Another group of original devices with identical electrical performance, after the same duration of hydrogen treatment at 100 °C, exhibited a reverse shift in threshold voltage with a negative threshold shift of −0.91 V. The output characteristics were enhanced, and the saturation leakage current was increased. (3) The C-V method and the low-frequency noise method were used to investigate the effect of hydrogen effect on the device interface trap and border trap, respectively. It was found that high-temperature hydrogen conditions can passivate the interface/border traps of SiN[sub.x]/AlGaN, reducing the density of interface/border traps and mitigating the trap capture effect. However, in the room-temperature hydrogen experiment, the concentration of interface/border traps increased. The research findings in this paper provide valuable references for the design and application of depletion-mode AlGaN/GaN HEMT devices.
ISSN:2072-666X
2072-666X
DOI:10.3390/mi15020171