Optimization of the Conditions of InP Nanocrystal Synthesis Using Trisphosphines as Phosphorus Precursors

Fluorescent indium phosphide (InP) semiconductor quantum dots (QDs) are a promising low-toxicity alternative to cadmium chalcogenide QDs. It is expected that, if comparable optical characteristics are achieved, InP QDs can successfully displace Cd-containing nanocrystals from their traditional appli...

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Bibliographic Details
Published in:Physics of atomic nuclei 2023-12, Vol.86 (10), p.2330
Main Authors: Zarezin, D, Nabiev, I, Samokhvalov, P
Format: Article
Language:English
Subjects:
Indium
Optical properties
Production processes
Technology application
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Summary:Fluorescent indium phosphide (InP) semiconductor quantum dots (QDs) are a promising low-toxicity alternative to cadmium chalcogenide QDs. It is expected that, if comparable optical characteristics are achieved, InP QDs can successfully displace Cd-containing nanocrystals from their traditional applications in optoelectronics and biomedicine. To date, unfortunately, the optical parameters of InP QDs are inferior to those of their Cd-containing counterparts, and the methods of their production require additional optimization. This paper presents the results of experiments on optimizing the synthesis of InP QDs using tris(diethylamino)phosphine as a phosphorus precursor. It has been shown that optimization of the modes of reaction mixture heating during the synthesis allows obtaining highly homogeneous InP QDs with improved optical characteristics.
ISSN:1063-7788
DOI:10.1134/S1063778823110480