Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb.sub.1-xSn.sub.xTe with x [greater than or equal to] 0.4

We have optimized the growth conditions of the buffer layer for further deposition of Pb.sub.1-xSn.sub.xTe (x [greater than or equal to] 0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF.sub.2, BaF.sub.2, and Pb.su...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2023-05, Vol.57 (5), p.235
Main Authors: Kaveev, A. K, Tereshchenko, O. E
Format: Article
Language:English
Subjects:
Dielectrics
Epitaxy
Online Access:Get full text
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Summary:We have optimized the growth conditions of the buffer layer for further deposition of Pb.sub.1-xSn.sub.xTe (x [greater than or equal to] 0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF.sub.2, BaF.sub.2, and Pb.sub.0.7Sn.sub.0.3Te:In layers was formed and optimized on the Si(111) surface. The surface morphology of this structure was studied depending on the temperature growth regimes and the optimal combination of growth parameters was selected from the point of view of smoothness and crystalline quality.
ISSN:1063-7826
DOI:10.1134/S1063782623070114