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Investigating the Impact of Stress on the Optical Properties of GaN-MX[sub.2] Heterojunctions Using the First Principles
This study used the first-principles-based CASTEP software to calculate the structural, electronic, and optical properties of heterojunctions based on single-layer GaN. GaN-MX[sub.2] exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe...
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Published in: | Catalysts 2024-10, Vol.14 (10) |
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creator | Zhao, Xu-Cai Dai, Meng-Yao Lang, Fu-Mei Zhao, Can Chen, Qiao-Yue Zhang, Li-Li Huang, Yi-Neng Lu, Hai-Ming Qin, Xiao-Chuan |
description | This study used the first-principles-based CASTEP software to calculate the structural, electronic, and optical properties of heterojunctions based on single-layer GaN. GaN-MX[sub.2] exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe[sub.2] had the lowest binding energy, signifying its superior stability among the variants. When compared to single-layer GaN, which has an indirect band gap, all four heterojunctions displayed a smaller direct band gap. These heterojunctions were classified as type II. GaN-MoS[sub.2] and GaN-MoSe[sub.2] possessed relatively larger interface potential differences, hinting at stronger built-in electric fields. This resulted in an enhanced electron–hole separation ability. GaN-MoSe[sub.2] exhibited the highest value for the real part of the dielectric function. This suggests a superior electronic polarization capability under an electric field, leading to high electron mobility. GaN-MoSe[sub.2] possessed the strongest optical absorption capacity. Consequently, GaN-MoSe[sub.2] was inferred to possess the strongest photocatalytic capability. The band structure and optical properties of GaN-MoSe[sub.2] under applied pressure were further calculated. The findings revealed that stress significantly influenced the band gap width and light absorption capacity of GaN-MoSe[sub.2]. Specifically, under a pressure of 5 GPa, GaN-MoSe[sub.2] demonstrated a significantly narrower band gap and enhanced absorption capacity compared to its intrinsic state. These results imply that the application of stress could potentially boost its photocatalytic performance, making it a promising candidate for various applications. |
doi_str_mv | 10.3390/catal14100732 |
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GaN-MX[sub.2] exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe[sub.2] had the lowest binding energy, signifying its superior stability among the variants. When compared to single-layer GaN, which has an indirect band gap, all four heterojunctions displayed a smaller direct band gap. These heterojunctions were classified as type II. GaN-MoS[sub.2] and GaN-MoSe[sub.2] possessed relatively larger interface potential differences, hinting at stronger built-in electric fields. This resulted in an enhanced electron–hole separation ability. GaN-MoSe[sub.2] exhibited the highest value for the real part of the dielectric function. This suggests a superior electronic polarization capability under an electric field, leading to high electron mobility. GaN-MoSe[sub.2] possessed the strongest optical absorption capacity. Consequently, GaN-MoSe[sub.2] was inferred to possess the strongest photocatalytic capability. The band structure and optical properties of GaN-MoSe[sub.2] under applied pressure were further calculated. The findings revealed that stress significantly influenced the band gap width and light absorption capacity of GaN-MoSe[sub.2]. Specifically, under a pressure of 5 GPa, GaN-MoSe[sub.2] demonstrated a significantly narrower band gap and enhanced absorption capacity compared to its intrinsic state. These results imply that the application of stress could potentially boost its photocatalytic performance, making it a promising candidate for various applications.</description><identifier>ISSN: 2073-4344</identifier><identifier>EISSN: 2073-4344</identifier><identifier>DOI: 10.3390/catal14100732</identifier><language>eng</language><publisher>MDPI AG</publisher><subject>Comparative analysis ; Electric fields ; Force and energy ; Liquors ; Optical properties ; Technology application</subject><ispartof>Catalysts, 2024-10, Vol.14 (10)</ispartof><rights>COPYRIGHT 2024 MDPI AG</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhao, Xu-Cai</creatorcontrib><creatorcontrib>Dai, Meng-Yao</creatorcontrib><creatorcontrib>Lang, Fu-Mei</creatorcontrib><creatorcontrib>Zhao, Can</creatorcontrib><creatorcontrib>Chen, Qiao-Yue</creatorcontrib><creatorcontrib>Zhang, Li-Li</creatorcontrib><creatorcontrib>Huang, Yi-Neng</creatorcontrib><creatorcontrib>Lu, Hai-Ming</creatorcontrib><creatorcontrib>Qin, Xiao-Chuan</creatorcontrib><title>Investigating the Impact of Stress on the Optical Properties of GaN-MX[sub.2] Heterojunctions Using the First Principles</title><title>Catalysts</title><description>This study used the first-principles-based CASTEP software to calculate the structural, electronic, and optical properties of heterojunctions based on single-layer GaN. GaN-MX[sub.2] exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe[sub.2] had the lowest binding energy, signifying its superior stability among the variants. When compared to single-layer GaN, which has an indirect band gap, all four heterojunctions displayed a smaller direct band gap. These heterojunctions were classified as type II. GaN-MoS[sub.2] and GaN-MoSe[sub.2] possessed relatively larger interface potential differences, hinting at stronger built-in electric fields. This resulted in an enhanced electron–hole separation ability. GaN-MoSe[sub.2] exhibited the highest value for the real part of the dielectric function. This suggests a superior electronic polarization capability under an electric field, leading to high electron mobility. GaN-MoSe[sub.2] possessed the strongest optical absorption capacity. Consequently, GaN-MoSe[sub.2] was inferred to possess the strongest photocatalytic capability. The band structure and optical properties of GaN-MoSe[sub.2] under applied pressure were further calculated. The findings revealed that stress significantly influenced the band gap width and light absorption capacity of GaN-MoSe[sub.2]. Specifically, under a pressure of 5 GPa, GaN-MoSe[sub.2] demonstrated a significantly narrower band gap and enhanced absorption capacity compared to its intrinsic state. These results imply that the application of stress could potentially boost its photocatalytic performance, making it a promising candidate for various applications.</description><subject>Comparative analysis</subject><subject>Electric fields</subject><subject>Force and energy</subject><subject>Liquors</subject><subject>Optical properties</subject><subject>Technology application</subject><issn>2073-4344</issn><issn>2073-4344</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqVTMFKAzEUDKJgsT16zw_smmxSuj2KWNuDVaiCICIxvl1fSZMl71X8fKMoeHXmMMMwM0KcalUbM1dn3rEL2mqlZqY5EKOmaGWNtYd__LGYEG1VwVybVk9H4mMV34EYe8cYe8lvIFe7wXmWqZMbzkAkU_zObwZG74K8zWmAzAj01bly6-r64ZH2L3XzJJfAkNN2Hz1jiiTv6fd1gZm4bDF6HALQWBx1LhBMfvRE1IvLu4tl1bsAzxi7xNn5wlfYoU8ROiz5eautaWdmqsy_B58vH1yU</recordid><startdate>20241001</startdate><enddate>20241001</enddate><creator>Zhao, Xu-Cai</creator><creator>Dai, Meng-Yao</creator><creator>Lang, Fu-Mei</creator><creator>Zhao, Can</creator><creator>Chen, Qiao-Yue</creator><creator>Zhang, Li-Li</creator><creator>Huang, Yi-Neng</creator><creator>Lu, Hai-Ming</creator><creator>Qin, Xiao-Chuan</creator><general>MDPI AG</general><scope/></search><sort><creationdate>20241001</creationdate><title>Investigating the Impact of Stress on the Optical Properties of GaN-MX[sub.2] Heterojunctions Using the First Principles</title><author>Zhao, Xu-Cai ; Dai, Meng-Yao ; Lang, Fu-Mei ; Zhao, Can ; Chen, Qiao-Yue ; Zhang, Li-Li ; Huang, Yi-Neng ; Lu, Hai-Ming ; Qin, Xiao-Chuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-gale_infotracacademiconefile_A8143873503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Comparative analysis</topic><topic>Electric fields</topic><topic>Force and energy</topic><topic>Liquors</topic><topic>Optical properties</topic><topic>Technology application</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Xu-Cai</creatorcontrib><creatorcontrib>Dai, Meng-Yao</creatorcontrib><creatorcontrib>Lang, Fu-Mei</creatorcontrib><creatorcontrib>Zhao, Can</creatorcontrib><creatorcontrib>Chen, Qiao-Yue</creatorcontrib><creatorcontrib>Zhang, Li-Li</creatorcontrib><creatorcontrib>Huang, Yi-Neng</creatorcontrib><creatorcontrib>Lu, Hai-Ming</creatorcontrib><creatorcontrib>Qin, Xiao-Chuan</creatorcontrib><jtitle>Catalysts</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Xu-Cai</au><au>Dai, Meng-Yao</au><au>Lang, Fu-Mei</au><au>Zhao, Can</au><au>Chen, Qiao-Yue</au><au>Zhang, Li-Li</au><au>Huang, Yi-Neng</au><au>Lu, Hai-Ming</au><au>Qin, Xiao-Chuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating the Impact of Stress on the Optical Properties of GaN-MX[sub.2] Heterojunctions Using the First Principles</atitle><jtitle>Catalysts</jtitle><date>2024-10-01</date><risdate>2024</risdate><volume>14</volume><issue>10</issue><issn>2073-4344</issn><eissn>2073-4344</eissn><abstract>This study used the first-principles-based CASTEP software to calculate the structural, electronic, and optical properties of heterojunctions based on single-layer GaN. GaN-MX[sub.2] exhibited minimal lattice mismatches, typically less than 3.5%, thereby ensuring lattice coherence. Notably, GaN-MoSe[sub.2] had the lowest binding energy, signifying its superior stability among the variants. When compared to single-layer GaN, which has an indirect band gap, all four heterojunctions displayed a smaller direct band gap. These heterojunctions were classified as type II. GaN-MoS[sub.2] and GaN-MoSe[sub.2] possessed relatively larger interface potential differences, hinting at stronger built-in electric fields. This resulted in an enhanced electron–hole separation ability. GaN-MoSe[sub.2] exhibited the highest value for the real part of the dielectric function. This suggests a superior electronic polarization capability under an electric field, leading to high electron mobility. GaN-MoSe[sub.2] possessed the strongest optical absorption capacity. Consequently, GaN-MoSe[sub.2] was inferred to possess the strongest photocatalytic capability. The band structure and optical properties of GaN-MoSe[sub.2] under applied pressure were further calculated. The findings revealed that stress significantly influenced the band gap width and light absorption capacity of GaN-MoSe[sub.2]. Specifically, under a pressure of 5 GPa, GaN-MoSe[sub.2] demonstrated a significantly narrower band gap and enhanced absorption capacity compared to its intrinsic state. These results imply that the application of stress could potentially boost its photocatalytic performance, making it a promising candidate for various applications.</abstract><pub>MDPI AG</pub><doi>10.3390/catal14100732</doi></addata></record> |
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subjects | Comparative analysis Electric fields Force and energy Liquors Optical properties Technology application |
title | Investigating the Impact of Stress on the Optical Properties of GaN-MX[sub.2] Heterojunctions Using the First Principles |
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