Properties of ZnO:[Er.sup.3+] films obtained by the sol-gel method

Polycrystalline and single-phase ZnO:Al:[Er.sup.3+] films are synthesized by the sol-gel method (based on different types of solvents) on surfaces of single-crystal silicon and glass. The electrical measurement data (current-voltage and capacitance-voltage characteristics) show that these ZnO:Al:[Er...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-03, Vol.51 (3), p.392
Main Authors: Malyutina-Bronskaya, V.V, Semchenko, A.V, Sidsky, V.V, Fedorov, V.E
Format: Article
Language:English
Subjects:
Analysis
Electric properties
Energy (Physics)
Methods
Silicon
Zinc oxide
Online Access:Get full text
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Summary:Polycrystalline and single-phase ZnO:Al:[Er.sup.3+] films are synthesized by the sol-gel method (based on different types of solvents) on surfaces of single-crystal silicon and glass. The electrical measurement data (current-voltage and capacitance-voltage characteristics) show that these ZnO:Al:[Er.sup.3+] films are photosensitive. The introduction of [Er.sup.3+] rare-earth ions into a zinc-oxide film manifests itself in photosensitivity of the current-voltage and capacitance-voltage characteristics to light in the visible and infrared (IR) spectral ranges. The results of this study indicate that ZnO:Al:[Er.sup.3+] films synthesized by the sol-gel method can be used to design optoelectronic devices, in particular, to form solar-cell active layers. DOI: 10.1134/S1063782617030186
ISSN:1063-7826
DOI:10.1134/S1063782617030186