The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

• Published in: Nanotechnology 2009-09, Vol.20 (35), p.355704-355704
• Main Authors: Noé, P, Okuno, H, Jager, J-B, Delamadeleine, E, Demichel, O, Rouvière, J-L, Calvo, V, Maurizio, C, D’Acapito, F
• Format: Article
• Language: English
• Subjects: Condensed Matter; Engineering Sciences; Materials; Materials Science; Micro and nanotechnologies; Microelectronics; Optics; Photonic; Physics
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/20/35/355704

Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a function of the post-growth annealing temperature. Measurements of PL lifetime and effective Er excitation cross section for all the samples under non-resonant optical excitation with the Er(3+) atomic energy levels show that the number of Er(3+) ions sensitized by the silicon-rich matrix decreases as the annealing temperature is increased from 500 to 1050 degrees C. The origin of this effect is attributed to the reduction of the density of sensitizers for Er ions in the SRO matrix when the annealing temperature increases. Finally, extended x-ray absorption fine-structure spectroscopy (EXAFS) shows a strong correlation between the number of emitters and the mean local order around the erbium ions.