Pragmatic OxRAM compact model ready to use for design studies

• Published in: Solid-state electronics 2023-06, Vol.204, p.108652, Article 108652
• Main Authors: Lacord, J., Cagli, C., Sandrini, J.
• Format: Article
• Language: English
• Subjects: Engineering Sciences; Micro and nanotechnologies; Microelectronics
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2023.108652

•We propose a pragmatic OxRAM device compact model describing SET, RESET, read operations and accounting for variability.•The model is implemented in Verilog-A and usable with standard SPICE simulator.•The proposed model is able to describe multi-level OxRAM.•Switching time variation with programming voltages for SET and RESET operations is also included.•It is validated on HFO2 OxRAM device through the measurements of isolated 1 T-1R structure and 16 kb matrix. We propose a pragmatic OxRAM device compact model describing SET, RESET, read operations and accounting for variability. The model is implemented in Verilog-A and usable with standard SPICE simulator. The objective is not to provide physical insights into OxRAM device operation but to develop a robust model, simple to calibrate and accounting for the main effect for design studies. It includes the dependency of Low Resistive State (LRS) resistance with compliance current, and of High Resistive State (HRS) resistance with the programming voltage: the proposed model is able to describe multi-level OxRAM. Switching time variation with programming voltages for SET and RESET operations is also included. It is validated on HFO2 OxRAM device through the measurements of isolated 1 T-1R structures and 16 kb matrixes.