Amorphous semiconductor thin films characterization by nuclear microanalysis

A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths t...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Radioanalytical Chemistry 1980-01, Vol.55 (2), p.427-443
Main Authors: Thomas, J. P., Fallavier, M., Mackowski, J. M., Pijolat, C., Tousset, J., Wehr, M.
Format: Article
Language:English
Subjects:
Chemical and Process Engineering
Engineering Sciences
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523
cites cdi_FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523
container_end_page 443
container_issue 2
container_start_page 427
container_title Journal of Radioanalytical Chemistry
container_volume 55
creator Thomas, J. P.
Fallavier, M.
Mackowski, J. M.
Pijolat, C.
Tousset, J.
Wehr, M.
description A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.
doi_str_mv 10.1007/BF02514426
format article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_emse_00436105v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_emse_00436105v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523</originalsourceid><addsrcrecordid>eNpFkM1KxDAYRYMoWEc3PkHWQvVL0vx0WQfHEQpudB3SNKGRthmSjjA-vSOKs7qbey6Xg9AtgXsCIB8eN0A5qSoqzlBBuFIllQrOUQGEVSVIUl-iq5w_ADiRNStQ20wx7Ya4zzi7Kdg493u7xISXIczYh3HK2A4mGbu4FL7MEuKMuwOe93Z0JuEjkqKZzXjIIV-jC2_G7G7-coXeN09v623Zvj6_rJu2tFSIpeRCqF4Kz31NmbR15wmXQknhjKXWCcO6rnI9g16SSnCvam96AKEc867nlK3Q3e_uYEa9S2Ey6aCjCXrbtNpN2WmAigkC_JOcysejOSfn_wkC-keaPklj39UkX5s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Amorphous semiconductor thin films characterization by nuclear microanalysis</title><source>SpringerLink_过刊（NSTL购买）</source><creator>Thomas, J. P. ; Fallavier, M. ; Mackowski, J. M. ; Pijolat, C. ; Tousset, J. ; Wehr, M.</creator><creatorcontrib>Thomas, J. P. ; Fallavier, M. ; Mackowski, J. M. ; Pijolat, C. ; Tousset, J. ; Wehr, M.</creatorcontrib><description>A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.</description><identifier>ISSN: 0134-0719</identifier><identifier>EISSN: 1588-2780</identifier><identifier>DOI: 10.1007/BF02514426</identifier><language>eng</language><publisher>Springer-Verlag</publisher><subject>Chemical and Process Engineering ; Engineering Sciences</subject><ispartof>Journal of Radioanalytical Chemistry, 1980-01, Vol.55 (2), p.427-443</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523</citedby><cites>FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://hal-emse.ccsd.cnrs.fr/emse-00436105$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Thomas, J. P.</creatorcontrib><creatorcontrib>Fallavier, M.</creatorcontrib><creatorcontrib>Mackowski, J. M.</creatorcontrib><creatorcontrib>Pijolat, C.</creatorcontrib><creatorcontrib>Tousset, J.</creatorcontrib><creatorcontrib>Wehr, M.</creatorcontrib><title>Amorphous semiconductor thin films characterization by nuclear microanalysis</title><title>Journal of Radioanalytical Chemistry</title><description>A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.</description><subject>Chemical and Process Engineering</subject><subject>Engineering Sciences</subject><issn>0134-0719</issn><issn>1588-2780</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNpFkM1KxDAYRYMoWEc3PkHWQvVL0vx0WQfHEQpudB3SNKGRthmSjjA-vSOKs7qbey6Xg9AtgXsCIB8eN0A5qSoqzlBBuFIllQrOUQGEVSVIUl-iq5w_ADiRNStQ20wx7Ya4zzi7Kdg493u7xISXIczYh3HK2A4mGbu4FL7MEuKMuwOe93Z0JuEjkqKZzXjIIV-jC2_G7G7-coXeN09v623Zvj6_rJu2tFSIpeRCqF4Kz31NmbR15wmXQknhjKXWCcO6rnI9g16SSnCvam96AKEc867nlK3Q3e_uYEa9S2Ey6aCjCXrbtNpN2WmAigkC_JOcysejOSfn_wkC-keaPklj39UkX5s</recordid><startdate>19800101</startdate><enddate>19800101</enddate><creator>Thomas, J. P.</creator><creator>Fallavier, M.</creator><creator>Mackowski, J. M.</creator><creator>Pijolat, C.</creator><creator>Tousset, J.</creator><creator>Wehr, M.</creator><general>Springer-Verlag</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>19800101</creationdate><title>Amorphous semiconductor thin films characterization by nuclear microanalysis</title><author>Thomas, J. P. ; Fallavier, M. ; Mackowski, J. M. ; Pijolat, C. ; Tousset, J. ; Wehr, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><topic>Chemical and Process Engineering</topic><topic>Engineering Sciences</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Thomas, J. P.</creatorcontrib><creatorcontrib>Fallavier, M.</creatorcontrib><creatorcontrib>Mackowski, J. M.</creatorcontrib><creatorcontrib>Pijolat, C.</creatorcontrib><creatorcontrib>Tousset, J.</creatorcontrib><creatorcontrib>Wehr, M.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of Radioanalytical Chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Thomas, J. P.</au><au>Fallavier, M.</au><au>Mackowski, J. M.</au><au>Pijolat, C.</au><au>Tousset, J.</au><au>Wehr, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Amorphous semiconductor thin films characterization by nuclear microanalysis</atitle><jtitle>Journal of Radioanalytical Chemistry</jtitle><date>1980-01-01</date><risdate>1980</risdate><volume>55</volume><issue>2</issue><spage>427</spage><epage>443</epage><pages>427-443</pages><issn>0134-0719</issn><eissn>1588-2780</eissn><abstract>A review is presented summarizing the specific nuclear microanalysis methods applied in our laboratory to study amorphous semiconductor thin films. For backscattering, ~3 MeV Li ions are applicable when depth resolution and sensitivity are required while up to 8 MeV a-particles allow larger depths to be probed and elemental interferences to be solved. These features are predominant for diffusion studies between metal electrodes and chalcogenide films. On the other hand hydrogen profiling using the 1H(15N, αγ) resonant nuclear reactions is described and analytical problems associated with its use are discussed. Applications to the elaboration conditions of hydrogenated (a)Si is developed.</abstract><pub>Springer-Verlag</pub><doi>10.1007/BF02514426</doi><tpages>17</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0134-0719
ispartof Journal of Radioanalytical Chemistry, 1980-01, Vol.55 (2), p.427-443
issn 0134-0719
1588-2780
language eng
recordid cdi_hal_primary_oai_HAL_emse_00436105v1
source SpringerLink_过刊（NSTL购买）
subjects Chemical and Process Engineering
Engineering Sciences
title Amorphous semiconductor thin films characterization by nuclear microanalysis
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T16%3A48%3A46IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Amorphous%20semiconductor%20thin%20films%20characterization%20by%20nuclear%20microanalysis&rft.jtitle=Journal%20of%20Radioanalytical%20Chemistry&rft.au=Thomas,%20J.%20P.&rft.date=1980-01-01&rft.volume=55&rft.issue=2&rft.spage=427&rft.epage=443&rft.pages=427-443&rft.issn=0134-0719&rft.eissn=1588-2780&rft_id=info:doi/10.1007/BF02514426&rft_dat=%3Chal_cross%3Eoai_HAL_emse_00436105v1%3C/hal_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c266t-5668d76f5f9237c9bf1576876eac2ce6a3bb4ed30d71465f89fad0068e3fed523%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true