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Limiting step involved in the thermal growth of silicon oxide films on silicon carbide
Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that the limiti...
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| Published in: | Physical review letters 2002-12, Vol.89 (25), p.256102-256102, Article 256102 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c386t-14f7c79966ae4e73213526860fc24c112ab44f98d272f8bba3d5bb5f6bf6fa083 |
| container_end_page | 256102 |
| container_issue | 25 |
| container_start_page | 256102 |
| container_title | Physical review letters |
| container_volume | 89 |
| creator | Vickridge, I C Trimaille, I Ganem, J-J Rigo, S Radtke, C Baumvol, I J R Stedile, F C |
| description | Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that the limiting steps of the thermal oxide growth are different in these two semiconductors, being diffusion limited in the case of Si and reaction limited in the case of SiC. This fact renders the growth kinetics of SiO2 on SiC very sensitive to the reactivity of the interface region, whose compositional and structural changes can affect the electrical properties of the structure. |
| doi_str_mv | 10.1103/PhysRevLett.89.256102 |
| format | article |
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| source | American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list) |
| title | Limiting step involved in the thermal growth of silicon oxide films on silicon carbide |
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