Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach

We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the different...

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Bibliographic Details
Published in:Journal of applied physics 2004-02, Vol.95 (4), p.1770-1773
Main Authors: de Almeida, R. M. C., Baumvol, I. J. R., Ganem, J. J., Trimaille, I., Rigo, S.
Format: Article
Language:English
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Summary:We present some experimental results and propose a reaction-diffusion model to describe thermal growth of silicon oxynitride films on Si in NO and N2O, as well as annealing in NO of thermally grown silicon oxide films on Si. We obtain growth kinetics and N and O depth distributions for the different growth routes by changing only initial and boundary conditions of a set of nonlinear differential equations. The results suggest that the puzzling differences in film growth rate and N incorporation originate from dynamical effects, rather than in differences in chemical reactions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1639139