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UV and white electroluminescence in AVB polymer
UV-Vis absorption, photoluminescence (PL), and electroluminescence (EL) from heterostructure thin films made of 1,4-bis-(9-anthrylvinyl)-benzene (AVB) are investigated. UV-Vis absorption data are used to determine the band gap of the material which is estimated to be 2.28 eV. It is observed that the...
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Published in: | Synthetic metals 2003-09, Vol.139 (2), p.245-249 |
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container_end_page | 249 |
container_issue | 2 |
container_start_page | 245 |
container_title | Synthetic metals |
container_volume | 139 |
creator | Romdhane, S. Marai, F. Hassine, L. Fave, J.L. Roussel, J. Majdoub, M. Bouchriha, H. |
description | UV-Vis absorption, photoluminescence (PL), and electroluminescence (EL) from heterostructure thin films made of 1,4-bis-(9-anthrylvinyl)-benzene (AVB) are investigated. UV-Vis absorption data are used to determine the band gap of the material which is estimated to be 2.28
eV. It is observed that the AVB electroluminescence spectrum is broad, ranging from 400 to 850
nm. The EL is obtained at a low voltage (less than 6
V) at which the current density is 3
mA/cm
2. The current–voltage–electroluminescence (
I–
V–EL) characteristics are systematically studied in the ITO/AVB/Al device. The diode shows a power-law
I–
V dependence and a space-charge-limited current with traps (SCLC). |
doi_str_mv | 10.1016/S0379-6779(03)00128-0 |
format | article |
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eV. It is observed that the AVB electroluminescence spectrum is broad, ranging from 400 to 850
nm. The EL is obtained at a low voltage (less than 6
V) at which the current density is 3
mA/cm
2. The current–voltage–electroluminescence (
I–
V–EL) characteristics are systematically studied in the ITO/AVB/Al device. The diode shows a power-law
I–
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eV. It is observed that the AVB electroluminescence spectrum is broad, ranging from 400 to 850
nm. The EL is obtained at a low voltage (less than 6
V) at which the current density is 3
mA/cm
2. The current–voltage–electroluminescence (
I–
V–EL) characteristics are systematically studied in the ITO/AVB/Al device. The diode shows a power-law
I–
V dependence and a space-charge-limited current with traps (SCLC).</description><subject>Applied sciences</subject><subject>AVB polymer</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Organic light emitting diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>UV and white electroluminescence</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNqFkEFLwzAYhoMoOKc_QehFcIe6L03TJCeZQ50w8KDbNaRJyiJdO5K5sX9vuso8ekr48rz5eB-EbjE8YMDF-AMIE2nBmLgHMgLAGU_hDA0wj2OSCThHgxNyia5C-IJIiYwO0HixTFRjkv3KbW1ia6u3vq2_166xQdtG28Q1yWT5lGza-rC2_hpdVKoO9ub3HKLFy_PndJbO31_fppN5qnPMtykFZXItLMG5wCWUGS8KQygpqyynmCpOKQNKucFGaM4yLYzGtOyebM6IJkM06v9dqVpuvFsrf5CtcnI2mctu1jXgLMc7HFnas9q3IXhbnQIYZGdIHg3Jrr4EIo-G4mWI7vrcRgWt6sqrRrvwF6ZAOWE0co89Z2PhnbNeBu06N8b56Eua1v2z6Qek-Xd3</recordid><startdate>20030905</startdate><enddate>20030905</enddate><creator>Romdhane, S.</creator><creator>Marai, F.</creator><creator>Hassine, L.</creator><creator>Fave, J.L.</creator><creator>Roussel, J.</creator><creator>Majdoub, M.</creator><creator>Bouchriha, H.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20030905</creationdate><title>UV and white electroluminescence in AVB polymer</title><author>Romdhane, S. ; Marai, F. ; Hassine, L. ; Fave, J.L. ; Roussel, J. ; Majdoub, M. ; Bouchriha, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c418t-50ad4c9e31491b0b2866d353bf24515a85570558d1d9c872c9dc15b515ae473c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>AVB polymer</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Organic light emitting diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>UV and white electroluminescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Romdhane, S.</creatorcontrib><creatorcontrib>Marai, F.</creatorcontrib><creatorcontrib>Hassine, L.</creatorcontrib><creatorcontrib>Fave, J.L.</creatorcontrib><creatorcontrib>Roussel, J.</creatorcontrib><creatorcontrib>Majdoub, M.</creatorcontrib><creatorcontrib>Bouchriha, H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Romdhane, S.</au><au>Marai, F.</au><au>Hassine, L.</au><au>Fave, J.L.</au><au>Roussel, J.</au><au>Majdoub, M.</au><au>Bouchriha, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>UV and white electroluminescence in AVB polymer</atitle><jtitle>Synthetic metals</jtitle><date>2003-09-05</date><risdate>2003</risdate><volume>139</volume><issue>2</issue><spage>245</spage><epage>249</epage><pages>245-249</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><coden>SYMEDZ</coden><abstract>UV-Vis absorption, photoluminescence (PL), and electroluminescence (EL) from heterostructure thin films made of 1,4-bis-(9-anthrylvinyl)-benzene (AVB) are investigated. UV-Vis absorption data are used to determine the band gap of the material which is estimated to be 2.28
eV. It is observed that the AVB electroluminescence spectrum is broad, ranging from 400 to 850
nm. The EL is obtained at a low voltage (less than 6
V) at which the current density is 3
mA/cm
2. The current–voltage–electroluminescence (
I–
V–EL) characteristics are systematically studied in the ITO/AVB/Al device. The diode shows a power-law
I–
V dependence and a space-charge-limited current with traps (SCLC).</abstract><cop>Lausanne</cop><cop>Amsterdam</cop><cop>New York, NY</cop><pub>Elsevier B.V</pub><doi>10.1016/S0379-6779(03)00128-0</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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issn | 0379-6779 1879-3290 |
language | eng |
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source | ScienceDirect Journals |
subjects | Applied sciences AVB polymer Electronics Exact sciences and technology Optoelectronic devices Organic light emitting diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices UV and white electroluminescence |
title | UV and white electroluminescence in AVB polymer |
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