Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers

Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 mum InAs QD lasers on InP substrate have been developed. Based on time resol...

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Bibliographic Details
Published in:Optical and quantum electronics 2006-03, Vol.38 (4-6), p.369-379
Main Authors: VESELINOV, K, GRILLOT, F, RAMDANE, A, MISKA, P, HOMEYER, E, CAROFF, P, PLATZ, C, EVEN, J, MARIE, X, DEHAESE, O, LOUALICHE, S
Format: Article
Language:English
Subjects:
Engineering Sciences
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Photonic
Physics
Semiconductor lasers
laser diodes
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Summary:Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 mum InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Electroluminescence (EL) results are then shown at room temperature exhibiting a laser emission centered at 1.61 mum associated to a threshold current density as low as 820 A/cm for a six InAs QD stacked layers. Finally, a rate equation model based on the reservoir theory is used to model both time-resolved photoluminescence (TRPL) and electroluminescence results. It is shown that carrier dynamic calculations are in a good agreement with measurements since the saturation effect occurring at high injected power is clearly predicted.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-006-0037-2