A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped cap...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2006, Vol.16 (2), p.87-89
Main Authors: Vélu, Gabriel, Blary, Karine, Burgnies, Ludovic, Carru, Jean-Claude, Delos, Elisabet, Marteau, Aurélien, Lippens, Didier
Format: Article
Language:English
Subjects:
Engineering Sciences
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Summary:Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped capacitors. A 310/spl deg/ phaseshift was obtained at 30GHz and 35V of tuning voltage with 3.6dB of insertion loss yielding a figure of merit of 85/spl deg//dB.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2005.863198